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Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3- precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ~0.08 eV and show excellent thin-film transistor performance.

Nature Communications 7, Article number: 11160 doi:10.1038/ncomms11160

http://www.nature.com/ncomms/2016/160330/ncomms11160/full/ncomms11160.html

发布日期:2016/03/31 发布者: 点击数: