In Forster resonance energy transfer (FRET), energy non-radiatively transfers from a blue-shifted emitter to a red-shifted absorber by dipole-dipole coupling. This study shows that plasmonics enables the opposite transfer direction, transferring the plasmonic energy towards the short-wavelength direction to induce charge separation in a semiconductor. Plasmon-induced resonance energy transfer (PIRET) differs from FRET because of the lack of a Stoke's shift, non-local absorption effects and a strong dependence on the plasmon's dephasing rate and dipole moment. PIRET non-radiatively transfers energy through an insulating spacer layer, which prevents interfacial charge recombination losses and dephasing of the plasmon from hot-electron transfer. The distance dependence of dipole-dipole coupling is mapped out for a range of detuning across the plasmon resonance. PIRET can efficiently harvest visible and near-infrared sunlight with energy below the semiconductor band edge to help overcome the constraints of band-edge energetics for single semiconductors in photoelectrochemical cells, photocatalysts and photovoltaics.

Nature Photonics 9, 601?07 (2015) doi:10.1038/nphoton.2015.142