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MoS2 transistors with 1-nanometer gate lengths

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106. Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.

Science 07 Oct 2016:
Vol. 354, Issue 6308, pp. 99-102
DOI: 10.1126/science.aah4698

http://science.sciencemag.org/content/354/6308/99

发布日期:2016/10/24 发布者:网站管理员 点击数: